Integrated High Voltage Capacitor

ABSTRACT

A semiconductor device comprises a semiconductor die and an integrated capacitor formed over the semiconductor die. The integrated capacitor is configured to receive a high voltage signal. A transimpedance amplifier is formed in the semiconductor die. An avalanche photodiode is disposed over or adjacent to the semiconductor die. The integrated capacitor is coupled between the avalanche photodiode and a ground node. A resistor is coupled between a high voltage input and the avalanche photodiode. The resistor is an integrated passive device (IPD) formed over the semiconductor die. A first terminal of the integrated capacitor is coupled to a ground voltage node. A second terminal of the integrated capacitor is coupled to a voltage greater than 20 volts. The integrated capacitor comprises a plurality of interdigitated fingers in one embodiment. In another embodiment, the integrated capacitor comprises a plurality of vertically aligned plates.

CLAIM TO DOMESTIC PRIORITY

The present application is a continuation of U.S. patent applicationSer. No. 16/377,070, filed Apr. 5, 2019, which claims the benefit ofU.S. Provisional Application No. 62/658,073, filed Apr. 16, 2018, whichapplications are incorporated herein by reference.

FIELD OF THE INVENTION

The present invention relates in general to semiconductor devices and,more particularly, to a semiconductor device and method of filteringinterference using an integrated high voltage capacitor.

BACKGROUND OF THE INVENTION

Semiconductor devices are commonly found in modern electronic products.Semiconductor devices vary in the number and density of electricalcomponents. Discrete semiconductor devices generally contain one type ofelectrical component, e.g., a light emitting diode (LED), photodiode,small signal transistor, resistor, capacitor, inductor, or powermetal-oxide-semiconductor field-effect transistor (MOSFET). Integratedsemiconductor devices typically contain hundreds to millions ofelectrical components. Examples of integrated semiconductor devicesinclude microcontrollers, microprocessors, charged-coupled devices(CCDs), solar cells, and digital micro-mirror devices (DMDs).

Semiconductor devices perform a wide range of functions such as signalprocessing, high-speed calculations, transmitting and receivingelectromagnetic signals, controlling electronic devices, transformingsunlight to electricity, and creating visual projections for televisiondisplays. Semiconductor devices are found in the fields ofentertainment, communications, power conversion, networks, computers,and consumer products. Semiconductor devices are also found in militaryapplications, aviation, automotive, industrial controllers, and officeequipment.

Optical fibers are commonly used to transmit signals betweensemiconductor devices that are remote from each other. A light emittingdiode (LED), laser diode, or another electronically controllable lightsource is used to generate a light wave into a fiber. The fiber guidesthe light wave from the source device to a destination device. Thedestination device includes a photodiode that converts the opticalsignal into an electrical signal. Commonly an avalanche photodiode (APD)is used. A transimpedance amplifier (TIA) is used in a circuit with theAPD to condition the electrical signal for use by semiconductor devices.

FIG. 1 illustrates an example of an APD can 10. APD can 10 is a receiveroptical sub-assembly (ROSA) package with an APD 20, TIA 30, and othersupporting semiconductor devices integrated in a can-shaped package. Atop surface 12 of can 10 includes an opening 13 to expose at least APD20 within the can to receive an incoming optical signal. In someembodiments, a lens is disposed in opening 13 to focus light waves onAPD 20. Legs 14 extend down from the can for mounting of can 10 onto acircuit board or other substrate. Legs 14 extend through the bottom ofAPD can 10 and are connected to the semiconductor devices within the APDcan by bond wires 16. APD can 10 receives an optical signal throughopening 13 and transmits an electrical signal through legs 14 to beprocessed by connected semiconductor devices.

APD 20 uses a high voltage power source, typically between 20 and 90volts, e.g., 40 volts. The high voltage power signal may includeinterference from electromagnetic signals. With the recent proliferationof Wi-Fi operating on the 5 GHz channel, there is a particular need tofilter out electromagnetic interference (EMI) around 5 GHz in ROSApackages.

FIG. 2 illustrates one exemplary circuit diagram of an APD 20 and TIA 30used to receive a fiber optic signal. A current source 24 and APD 20 arecoupled in series between high voltage source 26 and ground node 28. Alight wave hitting APD 20 modifies the resistance of electrical currentthrough the APD, thus changing the voltage input to TIA 30 at circuitnode 29. TIA 30 is coupled between circuit node 29 and output node 38.TIA 30 includes a feedback circuit comprised of MOSFET 32 and resistor34. MOSFET 32 and resistor 34 are coupled in series between a VDD or lowvoltage rail 36 and the input of TIA 30 at circuit node 29.

Noise on the high voltage source 26 will affect the signal output by TIA30 at output node 38. One solution is to add a resistor 42 coupled inseries between high voltage source 26 and APD 20 and a high voltagecapacitor 40 coupled from the cathode of APD 20 to ground node 28. Highvoltage capacitor 40 includes a capacitance value suitable to shuntinterference in the 5 GHz range to ground, e.g., 200 pf. Resistor 42 isa suitable resistance value to form a single pole low pass filter withcapacitor 40, e.g., 500 ohms.

In the present state of the art, high voltage capacitor 40 and resistor42 have been implemented using one or more discrete components disposedin can 10 along with APD 20 and TIA 30. FIG. 3 illustrates an example ofa semiconductor package 44 including capacitor 40 and resistor 42provided within can 10 to filter power from high voltage input 26 tophotodiode 20. Photodiode 20 is stacked on a TIA semiconductor package50. APD can 10 has five legs 14 extending through the bottom of the can:high voltage input 26, low voltage input 36, ground 28, and a balancedoutput 38 a and 38 b. All of the legs 14 other than ground node 28 areelectrically isolated from the can package 10 by insulating rings 56.The can package body is connected to ground node 28.

The extra semiconductor package 44 needed to filter 5 GHz interferenceadds cost to the final package, as well as adding to the inductance ofinterconnects between the multiple components by having additional bondwires 16. In addition, the overall footprint of the circuit is increasedby having to place an extra part in can 10. The footprint can be reducedby stacking discrete component package 44 between TIA 30 and APD 20, butthat configuration puts strain on other design parameters. The increasedstack height introduces new challenges in focusing light through opening13 on APD 20, potentially reducing sensitivity.

One issue limiting the options for electrical components used to formthe filter is that the high voltage power supply is not suitable forprocessing on an integrated circuit. The maximum voltage applied to TIAparts is normally around 3.6 volts. Therefore, separate discretecomponents have always been required to filter out 5 GHz interference onthe high voltage input. A need exists for an improved method to filterinterference from 5 GHZ signals for ROSA packages.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a receiver optical sub-assembly in a can package;

FIG. 2 illustrates a photodetector circuit diagram with an avalanchephotodiode, transimpedance amplifier, and 5 GHz RC filter;

FIG. 3 illustrates an implementation of the photodetector circuit in acan package where the filter is formed with a discrete component;

FIGS. 4a-4c illustrate a metal-insulator-metal capacitor formed inconductive layers over the transimpedance amplifier semiconductor die;

FIGS. 5a-5f illustrate metal-oxide-metal capacitor options;

FIGS. 6a and 6b illustrate the transimpedance amplifier with integratedhigh voltage capacitor in a stacked configuration with an avalanchephotodiode;

FIG. 7 illustrates the transimpedance amplifier with integrated highvoltage capacitor in a side-by-side configuration with the avalanchephotodiode; and

FIGS. 8a-8c illustrate a stacked configuration with the APD connected tothe high voltage input through a contact pad on the bottom of the APD.

DETAILED DESCRIPTION OF THE DRAWINGS

The present invention is described in one or more embodiments in thefollowing description with reference to the figures, in which likenumerals represent the same or similar elements. While the invention isdescribed in terms of the best mode for achieving the invention'sobjectives, those skilled in the art will appreciate that thedescription is intended to cover alternatives, modifications, andequivalents as may be included within the spirit and scope of theinvention as defined by the appended claims and the claims' equivalentsas supported by the following disclosure and drawings.

FIG. 4a illustrates a cross-sectional view of TIA package 50 from FIG.3. TIA package 50 includes a semiconductor die 60 having TIA 30 formedin active surface 61. A plurality of contact pads 62 are formed onactive surface 61 to provide ohmic contact to TIA 30. A plurality ofoxide or insulating layers 66 and conductive layers or redistributionlayers (RDL) 68 are vertically interleaved over semiconductor die 60 toroute electrical signals as necessary, in what may be referred to as abuild-up interconnect structure. The top conductive layer 68, conductivelayer 68 b in FIG. 4a , includes a plurality of contact pads 71 forconnection of bond wires 16.

While only two conductive layers 68 a and 68 b are illustrated, anysuitable number of routing layers can be formed over semiconductor die60, with the top conductive layer 68 including contact pads 71 forconnection by bond wires 16, solder bumps, stud bumps, or anotherinterconnect structure. The top insulating layer, insulating layer 66 cin FIG. 4a , is formed over the contact pads of conductive layer 68 b asa solder resist or passivation layer. In some embodiments, insulatinglayer 66 c comprises a plurality of passivation layers formed overconductive layer 68 b. Openings are formed in insulating layer 66 c forelectrical interconnect of bond wires 16 to contact pads 71.

FIG. 4b illustrates TIA package 69 with high voltage capacitor 40implemented as a metal-insulation-metal (MIM) high voltage capacitor 40a. MIM capacitor 40 a is formed as part of conductive layers 68 over APDdie 60. Any desired number of conductive layers are formed oversemiconductor die 60 to route the electrical signals. As part of the topconductive layer, conductive layer 68 b in FIG. 4b , a bottom capacitorplate 70 is formed. Bottom capacitor plate 70 is a plane of conductivematerial deposited as part of conductive layer 68 b that has a suitableshape for a capacitor plate. Bottom capacitor plate 70 is coupled to aground voltage node through conductive layers 68 and bond wires 16.

Insulating layer 66 c is formed over conductive layer 68 b as in FIG. 4a. Openings are formed in insulating layer 66 c over contact pads 71 forthe connection of bond wires 16. However, insulating layer 66 c is leftto fully cover bottom capacitor plate 70. A top capacitor plate 72 isformed on insulating layer 66 c over bottom capacitor plate 70. Topcapacitor plate 72 can be formed by the same process and of the samematerial as conductive layers 68, or other suitable materials andprocesses can be used. A bond wire 16 is bonded onto top plate 72 tocouple capacitor 40 a to high voltage source 26 via an optional resistor42. In one embodiment, a bond wire 16 is formed on bottom plate 70 in anopening of insulating layer 66 c outside a footprint of top plate 72. Insome embodiments, insulating layer 66 c is the first of a plurality ofpassivation layers formed over conductive layer 68 b, and additionalpassivation layers are formed over top plate 72.

Capacitor plates 70 and 72 form capacitor 40 a as a MIM capacitorintegrated over TIA die 60. Plate 70 is coupled to ground, while plate72 is coupled to a high voltage source. In one embodiment, conductivelayers 68, including bottom plate 70, are formed from copper, and topplate 72 is formed from aluminum. In another embodiment, the topconductive layer 68, including bottom plate 70, is also formed fromaluminum while all underlying conductive layers 68 are copper. Inaddition to operating as the plate of a capacitor, bottom plate 70 isconnected to ground and helps shield the areas of semiconductor die 60under plate 70 from EMI. Bottom plate 70 coupled to ground also reducesinterference caused by the high voltage on top plate 72 being in closeproximity to semiconductor die 60.

Insulating layer 66 c, which can be the top insulating layer of thebuild-up interconnect structure stack or a first of one or morepassivation layers, operates as the capacitor's dielectric, and can beany suitable oxide or nitride. In designing MIM capacitor 40 a,calculations are made to determine that insulating layer 66 c betweenplates 70 and 72 will have a breakdown voltage sufficient for themaximum expected voltage potential of high voltage source 26.

FIG. 4c illustrates an alternative method of forming high voltagecapacitor 40 as MIM capacitor 40 b in TIA package 79. A bottom capacitorplate 70 is formed as part of conductive layer 68 b in much the samemanner as above. A dielectric layer 80 is formed on bottom capacitorplate 70 from any suitable capacitor dielectric material, e.g., an oxideor nitride material. Dielectric layer 80 is confined to the area ofbottom capacitor plate 70, rather than being formed over the entiredevice as illustrated with insulating layer 66 c in FIG. 4b . Havingdielectric layer 80 formed specifically as a capacitor dielectric allowsbetter customization of the material and thickness of the dielectriclayer. Dielectric layer 80 can be formed from materials and atthicknesses that may not be suitable for passivation layer 66 c.

A top capacitor plate 82 is formed over bottom plate 70 and dielectriclayer 80. Top capacitor plate 82 is similar to top plate 72 in FIG. 4b .Insulating layer 66 c is formed over conductive layer 68 b, dielectriclayer 80, and top capacitor plate 82 as a protective covering.Insulating layer 66 c covers the edges of top plate 82, which helpsprotect the MIM capacitor from physical damage and reduces thelikelihood that the MIM capacitor layers will peel. Openings are formedin insulating layer 66 c over top capacitor plate 82 and contact pads 71for connection by bond wires 16.

FIGS. 5a-5f illustrate various embodiments of high voltage capacitor 40formed as a metal-oxide-metal (MOM) capacitor. FIG. 5a shows MOMcapacitor 40 c formed within conductive layers 68 over TIA die 60 aswith the MIM capacitor embodiments in FIGS. 4b and 4c . However, ratherthan being formed as two vertically aligned plates, MOM capacitor 40 cis formed from a plurality of interdigitated fingers. FIG. 5aillustrates a top-down or plan view of a single conductive layer 68formed into a portion of MOM capacitor 40 c. A pair of bus bars 90 a and90 b is formed in parallel. Bus bar 90 a has a plurality of fingers 92 aextending toward bus bar 90 b. Bus bar 90 b has a plurality of fingers92 b extending toward bus bar 90 a. Each finger 92 a is formed between apair of fingers 92 b, and vice versa, without physically contacting eachother, to increase capacitance between the two sides.

Bus bar 90 a and fingers 92 a form one plate of the high voltage MOMcapacitor 40 c, while bus bar 90 b and fingers 92 b form the secondplate. One bus bar 90 a or 90 b is coupled to ground, while the secondbus bar is coupled to the high voltage input. Insulating layers 66 areformed under, over, and between bus bars 90 and fingers 92 as thecapacitor's dielectric. Openings can be formed in insulating layer 66over bus bars 90 a and 90 b for connection of subsequent conductivelayers 68 or for bond wires 16 from capacitor 40 c to ground and thehigh voltage source. The bus bar 90 coupled to ground can also becoupled to TIA die 60 through conductive layers 68.

FIG. 5b illustrates a perspective view of multiple conductive layers 68stacked to increase the capacitance of MOM capacitor 40 c. Eachindividual conductive layer 68 includes fingers 92 a and 92 binterdigitated as illustrated in FIG. 5a . Each successive conductivelayer 68 a through 68 c includes fingers 92 a aligned over theunderlying conductive layer's fingers 92 b, and fingers 92 b over theunderlying conductive layer's fingers 92 a. Each conductive layer 68includes a bus bar 90 a connected to fingers 92 a, and a bus bar 90 bconnected to fingers 92 b. The bus bars 90 of subsequent conductivelayers are coupled to each other vertically by conductive vias 94 orother interconnect structures formed through insulating layers 66.

In FIG. 5b , only three conductive layers 68 are illustrated, and eachconductive layer only includes three fingers 92. In practice, anydesired number of conductive layers 68 can be stacked with verticallyalternating fingers 92 a and 92 b, and with any desired number offingers per conductive layer to achieve a desired capacitance value. Allof the fingers 92 a of each conductive layer 68 are electrically coupledto each other as one side of MOM capacitor 40 c, and all of the fingers92 b of each conductive layer 68 are electrically coupled to each otheras the other side of the MOM capacitor 40 c.

The fingers 92 are interdigitated vertically and horizontally so thateach high voltage finger 92 is directly adjacent to as many as fourfingers at ground potential, and vice versa. In one embodiment, MOMcapacitor 40 c is built up over nine conductive layers using 0.1micrometer (μm) finger spacing. In other embodiments, a MOM capacitor isformed by stacking fingers over each other perpendicularly instead ofparallel as illustrated in FIG. 5b . MOM capacitor 40 c is normallyformed beginning from the first metal layer over semiconductor die 60.In other embodiments, a ground plane is formed in the first conductivelayer 68 a between MOM capacitor 40 c and the underlying portion ofsemiconductor die 60, and MOM capacitor 40 c is manufactured startingwith the second conductive layer 68 b. Lower conductive layers arenormally preferred because the fabrication process includes smallerconductive traces at lower conductive layers, which satisfies thedesired sizing of a MOM capacitor. However, a MOM capacitor can beformed in any combination of conductive layers.

In FIG. 5b , fingers 92 a are vertically stacked directly over or underfingers 92 b, so that each finger 92 is above or below a finger ofopposite polarity. The vertical interleaving of fingers 92 increases thecapacitance per volume of the MOM capacitor but creates some problemsfor higher voltage potentials. MOM capacitor 40 c is suitable for up toaround 35-40 volts, but leakage between the vertically interleavedstacked fingers 92 above 35 volts reduces the performance of capacitor40 c.

FIG. 5c illustrates MOM capacitor 40 d, without vertical interleaving.In MOM capacitor 40 d, each finger 92 is stacked vertically over fingersof the same polarity, i.e., all fingers 92 a are vertically aligned overor under other fingers 92 a, and fingers 92 b are vertically alignedwith other fingers 92 b. MOM capacitor 40 d without verticalinterleaving of fingers 92 is suitable for higher voltages, up to 60-90volts, which is typically the upper limits of ROSA high voltage inputs.

Fingers 92 are typically made 0.1 μm wide. For 60 volts, the typicalhorizontal spacing between fingers 92 is 0.3 μm but may be decreased forlower voltages and increased for higher voltages. The vertical spacebetween adjacent conductive layers 68 is typically 0.17 μm. The targetcapacitance for capacitor 40 is conventionally 200 picofarads (pF).However, 180 pF is considered to be a safe design choice, and values aslow as 100 pF provide adequate protection. A manufacturer canstandardize on one finger spacing, e.g., 0.3 μm, so that qualificationcan be done just once for a given process technology. Thereafter, aspecific chip is designed with an increased or reduced footprint orheight of capacitor 40 to customize the capacitor for a given inputvoltage or desired capacitance value.

Conductive vias 94 connect each layer of MOM capacitors 40 c and 40 d toeach other via the layers' respective bus bars 90. With fingers 92 ofthe same polarity being vertically aligned as in FIG. 5c , additionalconductive vias can be formed directly connecting fingers 92 to eachother. FIG. 5d illustrates MOM capacitor 40 e with conductive vias 96formed between vertically aligned fingers 92. Conductive vias 96generate additional capacitance for capacitor 40 e by building aconductive wall in the vertical plane, effectively adding extravertically oriented fingers 92 to the MOM stack.

FIG. 5e illustrates an optional guard ring 97 formed around MOMcapacitor 40 c. A separate guard ring 97 is formed as part of eachconductive layer 68 around the plates of capacitor 40 c in thatrespective conductive layer to reduce the effects induced by the highvoltage into surrounding circuitry. Conductive vias 94 can be formed toconnect each guard ring 97 of each conductive layer 86. Typically, a gapof about 10 μm is provided between MOM capacitor 40 c and othersurrounding circuitry, and conductive ring 97 is formed in the gap. Inother embodiments, the 10 μm gap can be larger or smaller depending ondesign constraints and desires. Guard rings 97 can be formed as part ofconductive layers 68 around any of the above or below described MOM orMIM capacitor embodiments.

Besides having a square-shaped footprint as illustrated above, MOMcapacitors can be formed in any arbitrary footprint. FIG. 5f illustratesMOM capacitor 40 f with an exemplary footprint. The shape isaccommodated by using multiple bus bars 90 in parallel. Each bus bar 90can have a different length depending on the length of the footprint ofMOM capacitor 40 f at the particular location. Bus bars alternatevertically between bus bars 90 a and 90 b. The number of bus bars 90 iscustomized to the desired width of capacitor 40 f. Each bus bar 90 aincludes fingers 92 a extending toward each adjacent bus bar 90 b. Forinternally located bus bars 90 a, fingers 92 a extend in two differentdirections perpendicular to the length of the bus bar because there aretwo adjacent bus bars 92 b. Similarly, bus bars 90 b can have fingers 92b extending in two different directions from the bus bar. For bus bars90 on the edge of the MOM capacitor 40 f footprint, fingers 92 onlyextend in toward the middle of the capacitor.

FIGS. 6a and 6b illustrate a ROSA device including an APD 20 stacked ona TIA package 100. FIG. 6a illustrates a perspective view, and FIG. 6billustrates a top-down view. Five legs of the can package extend throughthe bottom of the can as ground node 28, high voltage input 26, lowvoltage input 36, and output signal 38. In the illustrated embodiment,output 38 is a balanced output with two signals 38 a and 38 b.

TIA package 100 includes a high voltage capacitor 40, formed as a MOMcapacitor, MIM capacitor, or another integrated passive device (IPD)technology. The high voltage input 26 is coupled to TIA package 100 by abond wire 16, either directly or through a discrete resistor 42.Conductive layers of TIA package 100 route the high voltage source toone side of the integrated high voltage capacitor 40, and another bondwire 16 connects the high voltage signal to APD die 20. High voltagecapacitor 40 has a second side coupled to ground to filter 5 GHzinterference via another bond wire 16 and conductive layers 68.

In some embodiments, resistor 42 is formed as an IPD on TIA package 100along with capacitor 40. Resistor 42 may be formed from polysilicondeposited over the semiconductor die or within the build-up interconnectstructure comprised of insulating layers 66 and conductive layers 68.The poly resistor 42 connects the high voltage pad of TIA package 100 tothe high voltage plate of capacitor 40. Precautions may need to be takento ensure that resistor 42 is capable of withstanding electro-staticdischarge (ESD) events. Guard rings and ground planes can be formedaround or under resistor 42 to reduce the impact of ESD events on thesemiconductor die. Sufficient spacing between high voltage components,e.g., resistor 42 and capacitor 40, and the lower voltage circuitcomponents improves the ability to limit damage during an ESD event. Inone embodiment, resistor 42 is a 500 Ohm resistor. In other embodiments,resistor 42 has a value anywhere from 0 to 5,000 Ohms. Larger resistorscan be used if suitable for a given situation.

APD die 20 is stacked on TIA package 100 in FIGS. 6a and 6b , whichreduces the overall system footprint. Total interconnect length, andtherefore inductance, is reduced by eliminating superfluous componentsthat would otherwise have to be connected by bond wires 16. Interconnectlength is further reduced by orienting contact pads of APD 20 nearcontact pads of TIA 100 to reduce the length of bond wires 16. FIG. 6billustrates an optional passive component 52 used to filter the lowvoltage power signal 36. The high voltage passive components in package44 are still eliminated due to integration on TIA package 100. In someembodiments, the low voltage passive components 52 are integrated on TIApackage 100 as well.

FIG. 7 illustrates a configuration with APD die 20 disposed on thebottom of can 10 adjacent to TIA package 100. Again, a high voltagecapacitor is integrated onto TIA package 100 to reduce the number ofcomponents required, and the overall size of components. APD die 20 isdisposed with contact pads oriented toward TIA package 100 to reduceinterconnect length.

FIGS. 8a-8c illustrate an embodiment with the high voltage node coupledfrom TIA 100 to APD 20 through a contact pad on the bottom of the APD.In FIG. 8a , a pair of openings is formed through the top insulatinglayer 66 to expose a contact pad 110 of the top conductive layer 68. Thetop insulating layer 66 forms an oxide bridge between the two exposedportions of contact pad 110. The openings over contact pad 110 arepreferably rectangular shaped and form a square in combination. However,any other suitable shape is used in other embodiments. Having theopening over contact pad 110 split into two sections reduces physicalstress on the semiconductor die of APD 20, relative to one large hole,which could reduce performance. Two smaller holes, rather than one largehole, also provides improved support to the APD due to the viscosity ofconductive epoxy which is typically used.

Contact pad 110 is coupled directly to the high voltage side ofcapacitor 40 formed on TIA 100, and coupled to high voltage input 26through resistor 42. Contact pad 110 allows an APD to be directlyconnected to the high voltage input using surface-mount or flip-chiptechnology rather than a bond wire. Contact pad 110 can be a directextension from a bus bar 90 or upper plate 72, or capacitor 40 can belocated remotely from capacitor 40 and connected by a conductive traceof a conductive layer 68.

FIG. 8b illustrates APD 20 disposed on TIA package 100 over high voltagecontact pad 110. The cathode of APD 20 is connected to the high voltageinput through a contact pad on the bottom of the APD, and the anode ofAPD 20 is connected by a bond wire 16 to an input pad of TIA 100. Aplurality of bond wires in parallel is used to connect the anode of APD20 to TIA 100 in other embodiments. FIG. 8c shows a cross-section of TIA100 with bus bars 90 a and 90 b and fingers 92 a. Fingers 92 b areinterleaved horizontally with fingers 92 a and appear in othercross-sections. The top bus bar 90 b includes pad 110 extending from thebus bar.

In one embodiment, pad 110 is formed directly above capacitor 40 in anoverlying conductive layer 68, rather than, off to the side in the sameconductive layer. A grounded RF shield can be formed in one of theconductive layers 68 between capacitor 40 and APD 20 to reduceinterference. Conductive epoxy 112, solder paste, solder bump, or othersuitable interconnect structure is used to electrically couple contactpad 114 of the APD to contact pad 110. An optional adhesive 116 is usedbetween APD 20 and TIA 100 for physical support. In some embodiments,the body of APD 20 is either at the voltage potential of the cathode, orleft floating to reduce leakage through the body of the APD.

Integrating high voltage capacitor 40 on TIA package 100 reduces cost byeliminating a part from the ROSA package bill-of-materials, simplifiesmanufacturing by requiring fewer parts and fewer bond wires, improvesimmunity from Wi-Fi interference relative to using a discrete capacitordue to the removed bond wire, and improves optics by allowing moreflexibility in placement of APD 20. Integrating a high voltage capacitor40 works with any TIA device and any APD/TIA circuit topology.

While one or more embodiments of the present invention have beenillustrated in detail, the skilled artisan will appreciate thatmodifications and adaptations to those embodiments may be made withoutdeparting from the scope of the present invention as set forth in thefollowing claims.

What is claimed:
 1. A method of making a semiconductor device,comprising: providing a semiconductor die including a transimpedanceamplifier; forming a high voltage integrated capacitor over thesemiconductor die, wherein the high voltage integrated capacitorincludes a plurality of interdigitated fingers with a finger spacing of0.3 μm or greater between individual fingers of the plurality ofinterdigitated fingers; and forming an integrated resistor over thesemiconductor die, wherein the integrated resistor and the high voltageintegrated capacitor form a radio frequency (RF) filter.
 2. The methodof claim 1, further including coupling the high voltage integratedcapacitor to receive a high voltage signal through the integratedresistor.
 3. The method of claim 2, wherein the high voltage signal isbetween 60 and 90 volts.
 4. The method of claim 1, wherein the pluralityof interdigitated fingers are vertically aligned with each other bycommon polarity.
 5. The method of claim 1, further including disposingan avalanche photodiode (APD) over the semiconductor die.
 6. The methodof claim 5, further including: coupling a cathode of the APD to acircuit node between the high voltage integrated capacitor and theintegrated resistor; and coupling an anode of the APD to thetransimpedance amplifier.
 7. A method of making a semiconductor device,comprising: providing a semiconductor die including a transimpedanceamplifier; forming an integrated capacitor over the semiconductor die;and forming an integrated resistor over the semiconductor die, whereinthe integrated resistor and the integrated capacitor form a radiofrequency (RF) filter.
 8. The method of claim 7, further includingcoupling the integrated capacitor to receive a high voltage signalthrough the integrated resistor.
 9. The method of claim 8, wherein thehigh voltage signal is 35 volts or greater.
 10. The method of claim 7,further including disposing an avalanche photodiode (APD) over thesemiconductor die.
 11. The method of claim 10, further including:coupling a cathode of the APD to a circuit node between the integratedcapacitor and the integrated resistor; and coupling an anode of the APDto the transimpedance amplifier.
 12. The method of claim 10, furtherincluding: disposing the semiconductor die into a can-shaped package;and disposing a lens in an opening of the can-shaped package, whereinthe can-shaped package is adapted to guide a fiber-optic signal throughthe lens and onto the APD.
 13. The method of claim 7, wherein theintegrated capacitor includes a first terminal that is electricallyisolated from all components formed in the semiconductor die.
 14. Asemiconductor device, comprising: a semiconductor die including atransimpedance amplifier; an integrated capacitor formed over thesemiconductor die; and an integrated resistor formed over thesemiconductor die, wherein the integrated resistor and the integratedcapacitor form a radio frequency (RF) filter.
 15. The semiconductordevice of claim 14, wherein the integrated capacitor is coupled to ahigh voltage power input circuit node through the integrated resistor.16. The semiconductor device of claim 15, wherein the high voltage powerinput circuit node is configured to receive a voltage greater than orequal to 35 volts.
 17. The semiconductor device of claim 14, furtherincluding an avalanche photodiode (APD) disposed over the semiconductordie.
 18. The semiconductor device of claim 17, wherein a cathode of theAPD is coupled to a circuit node between the integrated capacitor andthe integrated resistor and an anode of the APD is coupled to thetransimpedance amplifier.
 19. The semiconductor device of claim 17,further including a conductive epoxy or solder disposed between thesemiconductor die and avalanche photodiode.
 20. The semiconductor deviceof claim 17, further including: a can-shaped package with thesemiconductor die disposed in the can-shaped package; and a lensdisposed in an opening of the can-shaped package, wherein the can-shapedpackage is adapted to guide a fiber-optic signal through the lens andonto the APD.